EP2S90F1020I4 vs EP2S130F1020I4 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP2S90F1020I4 sa pamamagitan ng Intel at EP2S130F1020I4 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP2S90F1020I4 EP2S130F1020I4
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND Obsolete
Family Stratix II Stratix II
Logic Elements (LE) 90,960 —
Equivalent LEs (with ALM) up to 180,000 —
Embedded Memory (bits) 4,520,488 6,747,840
Total RAM Blocks 758 (M512/M4K/M-RAM) —
DSP Blocks (18x18 multipliers) 12 —
Maximum User I/O 758 —
Transceivers Up to 12 (6.375 Gbps) —
Process Technology 90 nm all-layer copper SRAM, 1.2 V core —
Packhaging 1020-ball FBGA (33x33 mm) 1020-ball FC-FBGA (33x33 mm)
Temperature na Operasyon -40C to +100C (industrial, I4 grade) —
Supply Voltage (VCCINT) 1.2 V —
Supply Voltage (VCCIO) 1.5 V / 1.8 V / 2.5 V / 3.3 V (bank-dependent) —
Uri ng Pagpapasok Surface Mount (SMD/SMT) Surface Mount (FC-FBGA)
Level ng MSL 3 —
Lead-Free / RoHS Compliant —
Logic Elements — 132,540
Equivalent LEs — ~180,000
Adaptive Logic Modules (ALMs) — 53,016
Embedded Memory (M512 blocks) — 530
Embedded Memory (M4K blocks) — 768
Embedded Memory (M-RAM blocks) — 4
Embedded 18x18 Multipliers — 504
DSP Blocks — 48
User I/O Pins — 742
User I/O Banks — 12
Process Node — 90 nm CMOS, all-layer copper
Core Voltage (VCCINT) — 1.2 V
Speed Grade — I (industrial performance)
Device Revision — 4
Temperature ng Junction na Operasyon — -40C to +100C (industrial)
Configuration Scheme — Fast Passive Parallel x8, Passive Serial, JTAG
Tindminan RoHS — Compliant (per distributor listings)

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