EP2SGX30CF780I4N vs EP2SGX30CF780C7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP2SGX30CF780I4N sa pamamagitan ng Intel at EP2SGX30CF780C7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP2SGX30CF780I4N | EP2SGX30CF780C7 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | NRND |
| Family | Stratix II GX | — |
| Logic Elements | 33,880 | 33,000 |
| Logic Cells / CLBs | 33,880 | — |
| Process Technology | 90 nm CMOS | 90 nm |
| Core Supply Voltage | 1.15 V to 1.25 V | — |
| Maximum Internal Frequency | 622.08 MHz | — |
| Embedded Transceivers | 4 channels (up to 3.125 Gbps at C4) | — |
| Packhaging | 780-ball FC-FBGA, 29 x 29 mm, 1.0 mm pitch | 780-ball FineLine BGA (CF780) |
| Pin / Terminal Count | 780 | — |
| Temperature na Operasyon | -40C to +85C (Industrial) | 0C to +85C (commercial) |
| Uri ng Pagpapasok | Surface Mount (BGA) | — |
| Lead-Free | Yes | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance status] | Compliant (lead-free Fineline BGA) |
| Uri ng Memory | Embedded SRAM, external DDR/DDR2/QDR support | — |
| Configuration | JTAG / passive serial / fast passive parallel | — |
| Series | — | Stratix II GX |
| Embedded Memory | — | 1.9 Mbits |
| DSP Blocks (18x18 multipliers) | — | 256 |
| Maximum User I/O | — | 361 |
| Multi-Gigabit Transceivers | — | 4 channels |
| Transceiver Data Rate | — | 600 Mbps to 3.125 Gbps |
| PLLs | — | 4 |
| Core Voltage | — | 1.2 V |
| Ball Pitch | — | 1.0 mm |
| Speed Grade | — | C7 (fastest commercial) |
| Configuration Modes | — | Passive Serial, Fast Passive Parallel, Passive Parallel Asynchronous, JTAG |