EP3SE110F780C2 vs EP3SE110F780C3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE110F780C2 sa pamamagitan ng Intel at EP3SE110F780C3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE110F780C2 | EP3SE110F780C3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Family | Stratix III E (Enhanced) | Stratix III E |
| Series | EP3SE110 | — |
| Logic Elements (LE) | 107,500 | — |
| Embedded Memory | 8,936,448 bits (8.93 Mbit) | TriMatrix (MLAB + M9K + M144K) |
| Maximum User I/O | 488 | — |
| Embedded Multipliers | 768 (18x18) | — |
| PLLs | 4 | — |
| Process Node | 65 nm | — |
| Core Voltage (VCCINT) | 1.1 V | — |
| Packhaging | 780-BBGA, FCBGA (FineLine) | 780-ball FCBGA (Flip-Chip BGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Temperature na Operasyon | 0C to +85C (Commercial) | — |
| Speed Grade | C2 | — |
| Tindminan RoHS | Compliant | Compliant |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| Logic Elements (LEs) | — | 107,500 |
| Embedded Memory Bits | — | 8,936,448 |
| Logic Array Blocks (LABs) | — | 4,300 |
| User I/Os | — | 488 |
| Core Voltage | — | 1.1 V |
| Process Technology | — | 65 nm |
| Maximum Operating Frequency | — | 500 MHz |
| DSP Blocks | — | Yes (integrated, count varies by configuration) |
| Transceiver Channels | — | 8 (multi-gigabit) |
| Configuration Method | — | Serial / Parallel via Quartus II |
| Operating Temperature Grade | — | Commercial (C suffix) |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |