EP3SE110F780I3N vs EP3SE110F780C3N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE110F780I3N sa pamamagitan ng Intel at EP3SE110F780C3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3SE110F780I3N EP3SE110F780C3N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND Aktibo
Family Stratix III E Stratix III E
Logic Elements 107,500 —
Logic Array Blocks (LABs) 4,300 4,300
Embedded Memory Bits 8,936,448 (approximately 1.1 MB) 8,936,448
Maximum User I/Os 488 —
Core Voltage 1.1 V (range 1.05 V to 1.15 V) 1.1 V
Process Technology 65 nm CMOS 65 nm
Packhaging 780-pin FC-FBGA (Flip-Chip FineLine BGA) 780-ball FCBGA (Flip-Chip BGA)
Temperature na Operasyon -40 °C to +100 °C (Industrial, "I" grade) —
Configuration Interface Passive Serial (PS), Fast Passive Parallel (FPP), JTAG (IEEE 1149.1) —
Boundary-Scan Test Yes, per IEEE Std. 1149.1 —
Speed Grade 3 (Fast) —
PLLs Yes, with global and regional clock networks —
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount (BGA)
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL rating]
Supply Voltage Tolerance 1.05 V to 1.15 V —
Logic Elements (LEs) — 107,500
User I/Os — 488
Maximum Operating Frequency — 500 MHz
DSP Blocks — Yes (integrated, count varies by configuration)
Transceiver Channels — 8 (multi-gigabit)
Embedded Memory — TriMatrix (MLAB + M9K + M144K)
Configuration Method — Serial / Parallel via Quartus II
Operating Temperature Grade — Commercial (C suffix)

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