EP3SE260F1517C3N vs EP3SE260F1517I3G Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517C3N sa pamamagitan ng Intel at EP3SE260F1517I3G sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517C3N | EP3SE260F1517I3G |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | NRND |
| Family | Stratix III E | Stratix III E |
| Logic Elements | 254,400 | 255,000 |
| Embedded Memory | 16,672,768 bits (16.7 Mbits) | — |
| User I/Os | 976 | — |
| DSP Blocks (18x18 Multipliers) | 816 | — |
| M9K Memory Blocks | 1,040 | — |
| Maximum Transceiver Data Rate | 600 Mbps | — |
| PLLs | 4 | — |
| Global Clock Networks | 16 | — |
| Packhaging | 1517-BBGA (FCBGA) | 1517-ball FC-FBGA (Flip-Chip BGA) |
| Process Technology | 65 nm TSMC low-power CMOS | — |
| Speed Grade | C3 (commercial) | — |
| Temperature ng Junction na Operasyon | 0 C to +85 C (commercial) | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Tindminan RoHS | Compliant | — |
| External Memory Interfaces | DDR3, DDR2, QDRII+, RLDRAM2 | — |
| Embedded Memory Bits | — | 16,672,768 |
| Maximum Operating Frequency | — | 500 MHz |
| Core Voltage | — | 1.1 V |
| User I/O Count | — | 976 |
| Process Node | — | 65 nm |
| Embedded Multipliers | — | 768 (18x18) |
| PLL Count | — | 12 |
| Transceiver Data Rate | — | Up to 6.375 Gbps |
| Operating Temperature Grade | — | Industrial (-40C to +100C) |
| Lead-Free / RoHS | — | Yes (RoHS compliant per DigiKey listing) |
| Level ng MSL | — | [DATA_NEEDED: MSL level] |