EP3SE260F1517C4N vs EP3SE260F1517I3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517C4N sa pamamagitan ng Intel at EP3SE260F1517I3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517C4N | EP3SE260F1517I3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Obsolete |
| Series | Stratix® III E | — |
| Family | Field-Programmable Gate Array (FPGA) | Stratix® III E |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory | 16,672,768 bits | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Maximum User I/Os | 976 | — |
| Packhaging | 1517-BBGA, FCBGA | 1517-ball FC-FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0°C to 85°C | — |
| Core Voltage | 0.9 V | 1.1 V |
| Process Node | 65 nm | — |
| Level ng MSL | [DATA_NEEDED: MSL level] | — |
| Lead Free | [DATA_NEEDED: lead-free status] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Maximum Transceiver Data Rate | 12.5 Gbps | — |
| Embedded Memory Bits | — | 16,672,768 bits |
| User I/O Count | — | 976 |
| Process Technology | — | 65 nm |
| Speed Grade | — | -3 (fastest) |
| Temperature Grade | — | Industrial (I): -40 °C to +100 °C |
| Temperature ng Junction na Operasyon | — | -40 °C to +100 °C |
| Configuration Method | — | JTAG / Passive Serial / Active Serial |
| Lead-Free | — | Yes |
| Internal Logic Performance | — | Up to 500 MHz |
| Memory Subsystems | — | M9K + M144K block RAM, DDR2/DDR3/QDR II+ controllers |
| DSP Blocks | — | Yes (dedicated multiply-accumulate) |