EP3SE260F1517I3 vs EP3SE260F1517I3N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE260F1517I3 sa pamamagitan ng Intel at EP3SE260F1517I3N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE260F1517I3 | EP3SE260F1517I3N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Obsolete |
| Family | Stratix III E | Stratix® III E |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory (bits) | 16,672,768 | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Maximum User I/Os | 976 | — |
| Packhaging | 1517-BBGA, FCBGA | 1517-ball FC-FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Operating Temperature Grade | Industrial | — |
| Junction Temperature Range | -40C to +125C | — |
| Core Voltage | 1.0 V typical | 1.1 V |
| Process Technology | 65 nm CMOS | 65 nm |
| Maximum Core Frequency | 717 MHz | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, HSTL, SSTL | — |
| Tindminan RoHS | Compliant | Compliant |
| Configuration | SRAM-based, volatile (requires external configuration device) | — |
| Embedded Memory Bits | — | 16,672,768 bits |
| User I/O Count | — | 976 |
| Speed Grade | — | -3 (fastest) |
| Temperature Grade | — | Industrial (I): -40 °C to +100 °C |
| Temperature ng Junction na Operasyon | — | -40 °C to +100 °C |
| Configuration Method | — | JTAG / Passive Serial / Active Serial |
| Lead-Free | — | Yes |
| Internal Logic Performance | — | Up to 500 MHz |
| Memory Subsystems | — | M9K + M144K block RAM, DDR2/DDR3/QDR II+ controllers |
| DSP Blocks | — | Yes (dedicated multiply-accumulate) |