EP3SE50F780C4N vs EP3SE50F780C2N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE50F780C4N sa pamamagitan ng Intel at EP3SE50F780C2N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP3SE50F780C4N EP3SE50F780C2N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle NRND NRND
Family Stratix III E Stratix III Enhanced (E)
Logic Elements (LE) 47,500 —
Embedded Memory Bits 5,760,000 —
Embedded Memory (M9K/M144K blocks) 488 (per family datasheet) —
Number of LABs 1900 —
Maximum User I/Os 488 —
DSP Blocks (18x18 multipliers) 432 —
PLLs 12 (per family datasheet) —
Maximum Operating Frequency 717 MHz —
Transceiver Channels Up to 12 (per family, model-dependent) 12 (data rate not in source data)
Transceiver Data Rate Up to 6.375 Gbps (per Stratix III E family) —
Process Node 40 nm —
Packhaging 780-Ball FBGA, 29 mm x 29 mm, 1.0 mm pitch 780-ball FC-FBGA (FBGA-780)
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount (BGA)
Volte ng Pagbibigay Core 0.9 V, I/O 1.2 V-3.3 V (multi-rail) —
Temperature na Operasyon 0C to +85C (C4 commercial grade) —
Configuration Modes JTAG, Passive Serial, Fast Passive Parallel —
Tindminan RoHS Lead-free / RoHS compliant —
Level ng MSL 3 (per JEDEC J-STD-020, FBGA package) —
Hard Memory Controller DDR2/DDR3 SDRAM (per Stratix III E family) —
Logic Elements — 47,500
Adaptive Logic Modules (ALMs) — 19,000
Embedded Memory — 5,760,000 bits
DSP Blocks — Yes (number not in source data)
User I/O Count — 488
Process Technology — 65 nm CMOS
Core Voltage — 0.9 V to 1.1 V
Maximum Internal Clock Frequency — 600 MHz
Speed Grade — C2
Temperature Grade — Commercial (C2)
Lead Free — Yes
Configuration Mode — Passive Serial / Fast Passive Parallel

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita