EP3SE50F780I4LG vs EP3SE110F780I4LN Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP3SE50F780I4LG sa pamamagitan ng Intel at EP3SE110F780I4LN sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP3SE50F780I4LG | EP3SE110F780I4LN |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | NRND | Aktibo |
| Series | Stratix III E | Stratix III E |
| Family | Stratix III | — |
| Logic Elements | 47,500 | 107,500 |
| Adaptive Logic Modules (ALMs) | 19,000 | — |
| Embedded Memory | 5.49 Mbit | — |
| Maximum User I/Os | 488 | — |
| Packhaging | 780-ball FCBGA (FBGA-780) | 780-BBGA, FCBGA (FBGA-780) |
| Operating Supply Voltage (Core) | 1.1 V | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -40 C to +100 C | — |
| Process Node | 65 nm | — |
| DSP Blocks | Yes (dedicated, count not in source data) | Yes (DSP-intensive architecture) |
| High-Speed Transceivers | Multi-gigabit, count not in source data | — |
| Lead-Free / RoHS | Yes (G suffix = Pb-free) | — |
| Packaging | Tray | — |
| Uri ng Memory | Embedded SRAM block RAM | — |
| Logic Array Blocks (LABs) | — | 4,300 |
| Total Memory Bits | — | 8,936,448 |
| User I/O Count | — | 488 |
| Core Voltage | — | 0.9 V |
| Maximum Operating Frequency | — | 717 MHz |
| Temperature na Operasyon | — | -40C to +100C (Industrial) |
| Lead-Free / RoHS Status | — | Lead-free / RoHS compliant |
| Process Technology | — | 40 nm CMOS |
| Transceivers | — | Multi-gigabit embedded transceivers |
| Embedded Memory Type | — | M20K + MLAB |