EP4CE115F23C8N vs EP4CE40U19A7N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE115F23C8N sa pamamagitan ng Intel at EP4CE40U19A7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CE115F23C8N EP4CE40U19A7N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Series Cyclone IV E Cyclone IV E
Logic Elements 114,480 LE —
Embedded Memory 3,981,312 bits (3.8 Mbit) —
User I/O Count 280 —
Number of Logic Array Blocks (LABs) [DATA_NEEDED: LAB count] —
Embedded 18x18 Multipliers 432 —
General-purpose PLLs 4 —
Process Node 60 nm —
Core Voltage 1.2 V —
Packhaging 484-ball FineLine BGA (F23) 484-ball FBGA (U19)
Ball Pitch 1.0 mm —
Uri ng Pagpapasok Surface Mount (BGA) —
Temperature na Operasyon 0C to +85C (Commercial) —
Speed Grade C8 —
Tindminan RoHS Compliant Compliant
Family — EP4CE40
Logic Elements (LE) — 39,600
Embedded Memory (bits) — 1,161,216 (113 Kbytes)
Embedded Multipliers (18x18) — 116
M9K Memory Blocks — 66
Maximum User I/O — 328
PLLs — 4
Global Clock Networks — 20
Grade — Automotive (A7 = -40C to 125C TJ)
Process Technology — 60 nm low-power CMOS
Temperature ng Junction na Operasyon — -40C to +125C
Storage Temperature — -65C to +150C
Configuration Modes — JTAG, Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP)
External Memory Support — DDR/DDR2 SDRAM, QDRII SRAM
I/O Standards — LVDS, SSTL, HSTL, PCI, LVTTL, LVCMOS

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