EP4CE15F23C8N vs EP4CE115F23C8N Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE15F23C8N sa pamamagitan ng Intel at EP4CE115F23C8N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro EP4CE15F23C8N EP4CE115F23C8N
Brand Intel Intel
Kategorya FPGA & CPLD FPGA & CPLD
Katayuan ng Lifecycle Aktibo Aktibo
Series Cyclone IV E Cyclone IV E
Logic Elements 15,408 114,480 LE
Embedded Memory Bits 516,096 bits (63 KBytes) —
Embedded Multipliers (18x18) 343 —
General-purpose PLLs 4 4
Maximum User I/O Pins 343 —
Packhaging 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) 484-ball FineLine BGA (F23)
Process Technology 60 nm low-leakage CMOS —
Core Voltage (VCCINT) 1.0 V to 1.2 V —
I/O Bank Voltage (VCCIO) 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V —
Temperature na Operasyon 0C to 85C (Commercial) 0C to +85C (Commercial)
Speed Grade C8 (commercial, 8 ns internal timing) C8
Configuration Modes AS / PS / JTAG / FPP —
Uri ng Pagpapasok Surface Mount (BGA) Surface Mount (BGA)
Level ng MSL MSL3 (per JEDEC J-STD-020) —
Tindminan RoHS Compliant Compliant
Hard IP Blocks PCIe Gen1 root port, external memory interface —
Embedded Memory Type M9K (9 Kbit each) —
Embedded Memory — 3,981,312 bits (3.8 Mbit)
User I/O Count — 280
Number of Logic Array Blocks (LABs) — [DATA_NEEDED: LAB count]
Embedded 18x18 Multipliers — 432
Process Node — 60 nm
Core Voltage — 1.2 V
Ball Pitch — 1.0 mm

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