EP4CE15F23C8N vs EP4CE115F23C8N 对比

详细并排对比 EP4CE15F23C8N 出自 Intel 和 EP4CE115F23C8N 出自 Intel。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

规格对比

参数 EP4CE15F23C8N EP4CE115F23C8N
品牌 Intel Intel
分类 FPGA & CPLD FPGA & CPLD
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $33.10 $145.00
Series Cyclone IV E Cyclone IV E
Logic Elements 15,408 114,480 LE
Embedded Memory Bits 516,096 bits (63 KBytes) —
Embedded Multipliers (18x18) 343 —
General-purpose PLLs 4 4
Maximum User I/O Pins 343 —
封装 484-BGA (FineLine BGA, F23, 23x23 mm, 1.0 mm pitch) 484-ball FineLine BGA (F23)
Process Technology 60 nm low-leakage CMOS —
Core Voltage (VCCINT) 1.0 V to 1.2 V —
I/O Bank Voltage (VCCIO) 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V —
工作温度 0C to 85C (Commercial) 0C to +85C (Commercial)
Speed Grade C8 (commercial, 8 ns internal timing) C8
Configuration Modes AS / PS / JTAG / FPP —
安装类型 Surface Mount (BGA) Surface Mount (BGA)
MSL 等级 MSL3 (per JEDEC J-STD-020) —
RoHS 状态 Compliant Compliant
Hard IP Blocks PCIe Gen1 root port, external memory interface —
Embedded Memory Type M9K (9 Kbit each) —
Embedded Memory — 3,981,312 bits (3.8 Mbit)
User I/O Count — 280
Number of Logic Array Blocks (LABs) — [DATA_NEEDED: LAB count]
Embedded 18x18 Multipliers — 432
Process Node — 60 nm
Core Voltage — 1.2 V
Ball Pitch — 1.0 mm

数据手册与资源

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