EP4CE15U14A7N vs EP4CE115F23I7N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE15U14A7N sa pamamagitan ng Intel at EP4CE115F23I7N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE15U14A7N | EP4CE115F23I7N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone IV E | EP4CE115 (F23 package) |
| Logic Elements (LE) | 15,408 | 114,480 |
| Total Memory Bits | 516,096 bits | — |
| Embedded 18x18 Multipliers | 56 | — |
| General-Purpose PLLs | 4 | — |
| Maximum User I/Os | 165 | 280 |
| Packhaging | 256-ball UBGA (Ultra-FineLine BGA) | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch |
| Speed Grade | 7 | — |
| Core Voltage | 1.2 V | 1.0 V / 1.2 V |
| Process Node | 60 nm low-power | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | -40C to +100C (Industrial) |
| Configuration Modes | JTAG, AS, AP, PS | — |
| Bitstream Encryption | AES-128 (security-enhanced variant) | — |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| Tindminan RoHS | Compliant (per distributor listings) | Compliant |
| Series | — | Cyclone IV E |
| Embedded Memory Bits | — | 3,981,312 bits |
| Logic Array Blocks (LABs) | — | 7,180 |
| Number of PLLs | — | 4 |
| 18x18 Hardware Multipliers | — | 266 |
| I/O Voltage Banks | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Uri ng Pagpapasok | — | Surface Mount |
| Process Technology | — | 60 nm low-power CMOS (TSMC) |
| Configuration Method | — | JTAG, Active Serial, Active Parallel |
| Level ng MSL | — | 3 |
| Lead-Free | — | Yes |