EP4CE55F29C9LN vs EP4CE55F29I8N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE55F29C9LN sa pamamagitan ng Intel at EP4CE55F29I8N sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE55F29C9LN | EP4CE55F29I8N |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | Cyclone IV E | — |
| Logic Elements (LE) | 55,856 | — |
| Embedded Memory | 2,396,160 bits | — |
| Embedded 18x18 Multipliers | 374 | 374 |
| Logic Array Blocks (LAB) | 3,491 | — |
| M9K Memory Blocks | 260 | — |
| PLLs | 4 | — |
| Maximum User I/O Pins | 374 | [DATA_NEEDED: maximum user I/O count for F29 package] |
| Technology Node | 60 nm | — |
| Core Voltage (VCCINT) | 1.2 V | — |
| Temperature ng Junction na Operasyon | 0 °C to 85 °C (commercial) | — |
| Packhaging | 780-ball FBGA (F29) | 780-ball FBGA (F29, 29x29 mm) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Lead-Free / RoHS | Yes (Pb-free terminal finish, suffix 'N') | — |
| Speed Grade | C9 | — |
| Series | — | Cyclone IV E |
| Logic Elements (LEs) | — | 55,856 |
| Embedded Memory (bits) | — | 2,396,160 |
| General-Purpose PLLs | — | 4 |
| Process Technology | — | 60 nm low-power CMOS |
| Temperature na Operasyon | — | -40C to +100C (Industrial grade, suffix I) |
| Supply Voltage Core | — | 1.0 V (typical, VCCINT) |
| I/O Bank Supply Voltages | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.0 V / 3.3 V |
| Configuration Modes | — | Active Serial (AS), Passive Serial (PS), JTAG, Fast Passive Parallel (FPP) |
| External Memory Interfaces | — | DDR, DDR2, SDR, QDRII, QDRII+ SRAM |
| Differential I/O Standards | — | LVDS, RSDS, mini-LVDS, LVPECL (receive) |
| Tindminan RoHS | — | Compliant |