EP4CE75F29I7 vs EP4CE75F29C7 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EP4CE75F29I7 sa pamamagitan ng Intel at EP4CE75F29C7 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EP4CE75F29I7 | EP4CE75F29C7 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Series | Cyclone IV E | — |
| Manufacturer | Intel (formerly Altera) | — |
| Logic Elements (LEs) | 75,408 | 75 408 |
| Embedded Memory (bits) | 2,810,880 | — |
| Embedded Memory Blocks | 274 (M9K) | — |
| Embedded 18×18 Multipliers | 200 | — |
| PLLs | 4 | 4 |
| User I/O Count | 426 | — |
| Packhaging | 780-ball FBGA (FineLine BGA) | 780-ball FBGA (F29, 29 mm) |
| Temperature na Operasyon | -40 °C to +100 °C (Industrial) | — |
| Process Node | 60 nm low-power CMOS | — |
| Core Voltage (VCCINT) | 1.0 V / 1.2 V selectable | — |
| Configuration Modes | JTAG, Active Serial (AS), Passive Serial (PS) | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| External Memory Interfaces | DDR/DDR2 SDRAM, QDRII SRAM | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 3 (168 hours) | 3 (per JEDEC J-STD-020) |
| Uri ng Pagpapasok | Surface Mount (BGA) | Surface Mount (BGA) |
| Family | — | Cyclone IV E |
| Device Type | — | Field Programmable Gate Array (FPGA) |
| Embedded Memory Bits | — | 2 810 880 (4.5 Mbit, M9K blocks) |
| Embedded Multipliers (18 x 18) | — | 274 |
| Maximum User I/O | — | 426 |
| Process Technology | — | 60 nm |
| Core Voltage | — | 1.2 V |
| Operating Temperature Grade | — | Commercial (0 C to +85 C) |
| Configuration Method | — | JTAG, Active Serial (AS), Passive Serial (PS) |
| Block Memory Type | — | M9K (9 Kbit blocks) |
| Design Tool | — | Intel Quartus Prime (Lite / Standard / Pro) |