EPF10K100EFC484-3N vs EPF10K100EFC484-3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPF10K100EFC484-3N sa pamamagitan ng Intel at EPF10K100EFC484-3 sa pamamagitan ng Altera. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EPF10K100EFC484-3N | EPF10K100EFC484-3 |
|---|---|---|
| Brand | Intel | Altera |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements / Cells | 4992 | — |
| Total Gates | 100,000 | — |
| Embedded Memory (EAB) | 49,152 bits (12 EABs) | — |
| Logic Array Blocks (LABs) | 624 | 624 |
| User I/Os | 338 | — |
| Process Technology | 0.22 µm CMOS | — |
| Core Voltage (VCCINT) | 2.5 V | — |
| I/O Voltage (VCCIO) | MultiVolt (2.5 V / 3.3 V / 5.0 V tolerant per bank) | — |
| Internal Performance | 200 MHz | — |
| Speed Grade | -3 (fastest commercial bin) | -3 (fastest commercial) |
| Packhaging | 484-ball FineLine BGA (FC484 / FBGA-484) | 484-ball FineLine BGA |
| Temperature Grade | Commercial (0 °C to +70 °C) | — |
| Configuration Method | SRAM (external EPROM/Flash/JTAG required at power-up) | SRAM (volatile, requires configuration device) |
| Lead-Free / RoHS | Yes (N suffix = lead-free) | — |
| Uri ng Pagpapasok | Surface Mount (BGA) | — |
| Typical Gates | — | 100,000 |
| Maximum System Gates | — | 158,000 |
| Logic Elements | — | 4,992 |
| Embedded Memory (EAB RAM) | — | 49,152 bits |
| User I/O Pins | — | 338 |
| Temperature na Operasyon | — | 0C to +70C (Commercial) |
| Core Voltage | — | 2.5 V |
| I/O Standards Supported | — | 2.5V / 3.3V / 5.0V (PCI-compliant) |
| JTAG Support | — | IEEE Std. 1149.1-1990 BST |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |
| Lead-Free | — | [DATA_NEEDED: lead-free status] |