EPF10K250EBC600-3 vs EPF10K250EBC600-1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPF10K250EBC600-3 sa pamamagitan ng Intel at EPF10K250EBC600-1 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EPF10K250EBC600-3 | EPF10K250EBC600-1 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Obsolete | Obsolete |
| Family | FLEX 10KE | FLEX 10KE |
| Logic Elements | 12,160 LEs | 12,160 |
| Typical Gates | 250,000 | 250,000 |
| Maximum User I/O | 470 | — |
| Embedded Array Blocks (EABs) | 12 (each 2 Kbits) | 6 |
| Total Embedded Memory | 24 Kbits (RAM) | — |
| PLLs (Phase-Locked Loops) | 4 | — |
| Dedicated Clock Inputs | 6 | — |
| Speed Grade | -3 | -1 |
| Core Supply Voltage | 3.3 V | — |
| I/O Supply Voltage | 3.3 V (5 V tolerant) | — |
| Packhaging | 600-ball FineLine BGA | 600-BGA FineLine BGA |
| Configuration Mode | Passive Serial / Passive Parallel / JTAG | — |
| Boundary Scan | IEEE 1149.1 (JTAG) | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | 0°C to +70°C (Commercial) |
| Process Technology | SRAM-based CMOS | 0.22 µm SRAM |
| Manufacturer | — | Intel / Altera |
| Usable Gates | — | 110,000 |
| Maximum RAM Bits | — | 40,960 |
| Number of PLLs | — | 6 |
| Core Voltage | — | 5.0 V |
| Configuration Method | — | JTAG / ByteBlaster / EPC-series PROM |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS status] |
| Programmable I/O Voltage | — | 3.3 V / 5.0 V (MultiVolt I/O) |