EPF6010ATC100-3N vs EPF6010ATC100-3 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPF6010ATC100-3N sa pamamagitan ng Intel at EPF6010ATC100-3 sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Intel
EPF6010ATC100-3N - FLEX 6000 FPGA, 880 Cells, 100-TQFP | Intel
EPF6010ATC100-3N ⚠ Huling PagbiliPagsanggunian na paghahambing
| Parametro | EPF6010ATC100-3N | EPF6010ATC100-3 |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Huling Pagbili | NRND |
| Family | FLEX 6000 | FLEX 6000 |
| Logic Elements / Cells | 880 | 880 |
| Equivalent Gate Count | 10,000 gates | — |
| Logic Array Blocks (LABs) | 88 | 88 |
| User I/Os | 71 | — |
| Supply Voltage (Operating) | 3.0 V to 3.6 V | — |
| Maximum Internal Frequency | 142.86 MHz | — |
| Process Technology | 0.42 µm CMOS | 0.42 µm CMOS SRAM |
| Speed Grade | -3 | -3 (commercial, slowest grade) |
| Packhaging | 100-pin TQFP (14 x 14 x 1.4 mm) | TQFP-100 (100-pin) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0 °C to +70 °C (commercial) | 0C to +70C (commercial) |
| Programming Method | In-system SRAM via ByteBlaster/BitBlaster | — |
| Level ng MSL | 3 (168 hours) | [DATA_NEEDED: MSL level] |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Usable Gates | — | 10,000 |
| User I/O Pins | — | 71 |
| Supply Voltage (VCCINT) | — | 3.3 V |
| I/O Voltage Tolerance | — | 3.3 V / 5 V tolerant |
| Configuration Memory | — | SRAM (external configuration device required) |
| JTAG Support | — | Yes (IEEE 1149.1) |