EPM2210F256C5N vs EPM2210F256C4N Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng EPM2210F256C5N sa pamamagitan ng Intel at EPM2210F256C4N sa pamamagitan ng Intel. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | EPM2210F256C5N | EPM2210F256C4N |
|---|---|---|
| Brand | Intel | Intel |
| Kategorya | FPGA & CPLD | FPGA & CPLD |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Family | MAX II | MAX II |
| Logic Elements | 2210 | — |
| Macrocells | 1700 | — |
| User I/Os | 204 | — |
| User Flash Memory (UFM) | 8 Kbits | — |
| Propagation Delay (tPD) | 7 ns | — |
| Turn-On Delay (tSU) | 11.2 ns | — |
| Maximum Internal Frequency | 201.1 MHz | 247.5 MHz |
| Supply Voltage (VCCINT) | 2.375 V to 3.6 V (3.3 V typical) | — |
| I/O Voltage Standards | 1.5 V / 1.8 V / 2.5 V / 3.3 V | — |
| Process Technology | 0.18 um CMOS with on-chip flash | 0.18 µm |
| Global Clocks | 4 | — |
| Temperature na Operasyon | 0C to +85C (commercial) | — |
| Packhaging | 256-ball FineLine BGA (17x17mm, 1mm pitch) | 256-ball FineLine BGA (FBGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Configuration Memory | Internal flash (non-volatile, instant-on) | — |
| Programming Interface | JTAG (IEEE 1149.1) / ByteBlaster / USB-Blaster | JTAG IEEE Std. 1149.1 + ISP |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Device Type | — | CPLD |
| Logic Elements (LE) | — | 2210 |
| Macro Cells | — | 1700 |
| User Flash Memory | — | 204 Kbit |
| Pin-to-Pin Propagation Delay (tPD) | — | 7.0 ns |
| Maximum User I/O Pins | — | 212 (varies with package) |
| Global Clock Networks | — | 4 |
| Core Supply Voltage | — | 3.0 V to 3.6 V (3.3 V typical) |
| MultiVolt I/O Standards | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V LVTTL/LVCMOS, PCI 66 MHz |
| Hanay ng Temperature na Operasyon | — | 0 °C to +85 °C (Commercial) |