H5AN8G6NDJR vs MT40A1G8WE-075E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G6NDJR sa pamamagitan ng SK hynix at MT40A1G8WE-075E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G6NDJR | MT40A1G8WE-075E |
|---|---|---|
| Brand | SK hynix | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasyon | 512M x 16 | — |
| Rate ng Data | 3200 Mbps (DDR4-3200) | 2666 MT/s (1.33 GHz) |
| Volte ng Pagbibigay | 1.2 V | — |
| Packhaging | 96-ball FBGA (13mm x 7.5mm) | 78-ball FBGA (8x12mm) |
| Number of Terminals | 96 | — |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | 8 and 4 |
| Latensya ng CAS | 22 cycles (at 3200 Mbps) | Programmable |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | — |
| Mga Karakteristika | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| Laki ng Memory | — | 8 Gbit (1G x 8) |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| Operating Temperature (TC) | — | -40°C to +105°C (industrial) |
| Refresh Time (8192 cycles) | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Uri ng Pagpapasok | — | Surface Mount |
| I/O Type | — | 1.2V pseudo-open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| Tindminan RoHS | — | Compliant |
| AEC-Q100 | — | Optional (AIT variant) |