H5AN8G6NDJR vs MT40A1G8WE-075E 对比
详细并排对比 H5AN8G6NDJR 出自 SK hynix 和 MT40A1G8WE-075E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G6NDJR | MT40A1G8WE-075E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $35.00 | $11.90 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 3200 Mbps (DDR4-3200) | 2666 MT/s (1.33 GHz) |
| 电源电压 | 1.2 V | — |
| 封装 | 96-ball FBGA (13mm x 7.5mm) | 78-ball FBGA (8x12mm) |
| Number of Terminals | 96 | — |
| Maximum Supply Voltage (Vsup) | 1.26 V | — |
| Maximum Operating Temperature | 85 °C | — |
| Burst Length | 8 (BL8), 4 (BC4) | 8 and 4 |
| CAS 延迟 | 22 cycles (at 3200 Mbps) | Programmable |
| Access Mode | Multi Bank Page Burst | — |
| JESD-30 Code | R-PBGA-B96 | — |
| RoHS | Compliant | — |
| 特性 | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling | — |
| 存储容量 | — | 8 Gbit (1G x 8) |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| Operating Temperature (TC) | — | -40°C to +105°C (industrial) |
| Refresh Time (8192 cycles) | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| 安装类型 | — | Surface Mount |
| I/O Type | — | 1.2V pseudo-open-drain |
| VREFDQ | — | On-die, internal, adjustable |
| RoHS 状态 | — | Compliant |
| AEC-Q100 | — | Optional (AIT variant) |