H5AN8G8NAFR-UHC vs H5AN8G8NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5AN8G8NAFR-UHC sa pamamagitan ng SK hynix at H5AN8G8NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5AN8G8NAFR-UHC | H5AN8G8NAFR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organisasyon | 1G x 8 | 1G x 8 (x8) |
| Rate ng Data | 2400 Mbps/pin (PC2400) | 2666 MT/s (per -R speed grade suffix) |
| Supply Voltage (VDD) | 1.2 V (DDR4 standard) | — |
| Interface | CMOS, synchronous | DDR4 (Double Data Rate 4) |
| Packhaging | FBGA-78 (PBGA78) | 78-ball FBGA |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Family | H5AN8G4NAFR-xxC / H5AN8G8NAFR-xxC / H5AN8G6NAFR-xxC | — |
| Speed Grade Suffix | UHC | — |
| Tindminan RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Application Class | Main memory (high density, high bandwidth) | — |
| Temperature na Operasyon | [DATA_NEEDED: Operating Temperature] | [DATA_NEEDED: Operating Temperature range] |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Refresh | [DATA_NEEDED: Refresh specification] | — |
| Level ng MSL | [DATA_NEEDED: MSL Level] | — |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |