H5ANAG6NBJR-RDC vs H5ANAG6NBJR-VKC Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG6NBJR-RDC sa pamamagitan ng SK hynix at H5ANAG6NBJR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro H5ANAG6NBJR-RDC H5ANAG6NBJR-VKC
Brand SK hynix SK hynix
Kategorya DRAM Memory ICs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Memory Organization 16Gb x16 —
Density 16 Gb —
Rate ng Data 2666 Mbps (speed grade -RDC) 2666 Mbps (per family reference, VKC speed code)
Supply Voltage (VDD) 1.2 V —
Interface Synchronous, double data rate DDR4, SSTL-12
Clocking Fully synchronous to both clock edges —
Packhaging FBGA (Ball Grid Array), surface mount FBGA-96 (PBGA96)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology CMOS —
Standard JEDEC DDR4 SDRAM —
Application Main memory —
Temperature na Operasyon [DATA_NEEDED: Operating Temperature Range] -40C to +95C (family grade reference)
On-Die Termination (ODT) Supported (DDR4 feature) —
Bank Group Architecture DDR4 bank groups (per JEDEC DDR4) —
Tindminan RoHS [DATA_NEEDED: RoHS Status] [DATA_NEEDED: RoHS status]
Manufacturer — SK Hynix
Part Number — H5ANAG6NBJR-VKC
Memory Density — 16Gb (2GB)
Organisasyon — [DATA_NEEDED: x16 organization per datasheet]
Volte ng Pagbibigay — 1.2 V (DDR4 standard)
Auto Self-Refresh — Yes
Data Mask Function — Yes
Asynchronous Reset — Yes
Dynamic On-Chip Termination — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes

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