H5ANAG6NBJR-VKC vs H5ANAG6NBJR-RDC Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG6NBJR-VKC sa pamamagitan ng SK hynix at H5ANAG6NBJR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

SK hynix
H5ANAG6NBJR-RDC H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC - 16Gb DDR4 SDRAM 2666Mbps | SK hynix

H5ANAG6NBJR-RDC ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro H5ANAG6NBJR-VKC H5ANAG6NBJR-RDC
Brand SK hynix SK hynix
Kategorya Memory ICs DRAM
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer SK Hynix —
Part Number H5ANAG6NBJR-VKC —
Uri ng Memory DDR4 SDRAM DDR4 SDRAM
Memory Density 16Gb (2GB) —
Organisasyon [DATA_NEEDED: x16 organization per datasheet] —
Rate ng Data 2666 Mbps (per family reference, VKC speed code) 2666 Mbps (speed grade -RDC)
Volte ng Pagbibigay 1.2 V (DDR4 standard) —
Interface DDR4, SSTL-12 Synchronous, double data rate
Packhaging FBGA-96 (PBGA96) FBGA (Ball Grid Array), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature na Operasyon -40C to +95C (family grade reference) [DATA_NEEDED: Operating Temperature Range]
Auto Self-Refresh Yes —
Data Mask Function Yes —
Asynchronous Reset Yes —
Dynamic On-Chip Termination Yes —
ZQ Calibration Yes —
Write Leveling Yes —
CRC Function Yes —
Tindminan RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Memory Organization — 16Gb x16
Density — 16 Gb
Supply Voltage (VDD) — 1.2 V
Clocking — Fully synchronous to both clock edges
Technology — CMOS
Standard — JEDEC DDR4 SDRAM
Application — Main memory
On-Die Termination (ODT) — Supported (DDR4 feature)
Bank Group Architecture — DDR4 bank groups (per JEDEC DDR4)

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