H5ANAG8NCMR-VKC vs H5ANAG8NCMR-VKI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NCMR-VKC sa pamamagitan ng SK hynix at H5ANAG8NCMR-VKI sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG8NCMR-VKC | H5ANAG8NCMR-VKI |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | x8 |
| Rate ng Data | 2666 Mbps/pin (DDR4-2666) | 2666 Mbps per pin |
| Supply Voltage (VDD) | 1.2 V | [DATA_NEEDED: VDD] |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Packhaging | FBGA-78 | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount (BGA) |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | [DATA_NEEDED: bank group count] |
| Banks Total | 16 | — |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| Latensya ng CAS | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Manufacturer Process | CMOS DRAM | — |
| Technology | — | CMOS, volatile DRAM |
| Package Type | — | [DATA_NEEDED: package] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency] |
| Refresh (tREFI) | — | [DATA_NEEDED: refresh interval] |
| Product Status | — | Active |
| Clocking | — | Differential clock (CK / CK#), fully synchronous |
| On-Die Termination | — | Yes (ODT) |