H5ANAG8NCMR-VKC vs H5ANAG8NCMR-VKI 比較
詳細並排比較 H5ANAG8NCMR-VKC 由 SK hynix 與 H5ANAG8NCMR-VKI 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | H5ANAG8NCMR-VKC | H5ANAG8NCMR-VKI |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 記憶體容量 | 16 Gb | 16 Gb |
| Memory Organization | 2G x 8 | x8 |
| 資料速率 | 2666 Mbps/pin (DDR4-2666) | 2666 Mbps per pin |
| Supply Voltage (VDD) | 1.2 V | [DATA_NEEDED: VDD] |
| I/O Voltage (VDDQ) | 1.2 V | — |
| 封裝 | FBGA-78 | — |
| 安裝類型 | Surface Mount | Surface Mount (BGA) |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | [DATA_NEEDED: bank group count] |
| Banks Total | 16 | — |
| 工作溫度 | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature] |
| CAS 延遲 | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| RoHS 狀態 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS status] |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Manufacturer Process | CMOS DRAM | — |
| Technology | — | CMOS, volatile DRAM |
| Package Type | — | [DATA_NEEDED: package] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS latency] |
| Refresh (tREFI) | — | [DATA_NEEDED: refresh interval] |
| Product Status | — | Active |
| Clocking | — | Differential clock (CK / CK#), fully synchronous |
| On-Die Termination | — | Yes (ODT) |