H5ANAG8NCR-VKC vs H5ANAG8NCMR-VKC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5ANAG8NCR-VKC sa pamamagitan ng SK hynix at H5ANAG8NCMR-VKC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5ANAG8NCR-VKC | H5ANAG8NCMR-VKC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | [DATA_NEEDED: organization (e.g. 2G x8)] | 2G x 8 |
| Laki ng Memory | 16 Gbit | 16 Gb |
| Supply Voltage Range | 1.14 V to 1.26 V | — |
| Nominal Supply Voltage | 1.2 V | — |
| Max Data Rate | [DATA_NEEDED: Mbps per pin for VKC grade] | — |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Packhaging | FBGA-78 | FBGA-78 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Self Refresh | Auto self-refresh | — |
| Data Mask Function | Yes | — |
| On-Chip Termination | Dynamic ODT | — |
| Reset Function | Asynchronous reset | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC / CA Parity | Yes | — |
| Auto Precharge | Yes | — |
| Standby Current | [DATA_NEEDED: IDD current spec] | — |
| Tindminan RoHS | Compliant | [DATA_NEEDED: RoHS status] |
| Rate ng Data | — | 2666 Mbps/pin (DDR4-2666) |
| Supply Voltage (VDD) | — | 1.2 V |
| I/O Voltage (VDDQ) | — | 1.2 V |
| Speed Grade | — | VK (per SK hynix speed-bin suffix) |
| Power Class | — | Normal Power |
| Bank Groups | — | 4 |
| Banks Total | — | 16 |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency for VK speed bin] |
| Packaging | — | [DATA_NEEDED: standard packing quantity] |
| Manufacturer Process | — | CMOS DRAM |