H5TC4G63AFR-PBA vs NT5CC256M16CP-DI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng H5TC4G63AFR-PBA sa pamamagitan ng SK hynix at NT5CC256M16CP-DI sa pamamagitan ng Nanya Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | H5TC4G63AFR-PBA | NT5CC256M16CP-DI |
|---|---|---|
| Brand | SK hynix | Nanya Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | $3.98 | — |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4Gb | — |
| Organisasyon | 256M x 16 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V | — |
| Rate ng Data | 1866 Mbps (PC3L-14900) | — |
| Packhaging | 96-ball FBGA | VFBGA-96 |
| Ball Pitch | 0.8mm | — |
| Number of Banks | 8 | — |
| Burst Length | 8 and 4 (with burst chop) | 8, 4 |
| CAS Latency (CL) | 11, 12, 13 | 5, 6, 7, 8, 9, 10, 11 |
| Hanay ng Temperature na Operasyon | 0°C to +95°C (Tcase) | — |
| Interface | 16-bit I/O | Differential clock (CK, CK#) |
| On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| Auto Self-Refresh | Yes | — |
| Partial Array Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Total Density | — | 4Gb |
| Volte ng Pagbibigay | — | 1.35V (1.283V to 1.45V) |
| Speed Grade | — | DDR3-1600 (CL11) |
| Write Latency (CWL) | — | 5, 6, 7, 8, 9 |
| Internal Banks | — | 8 |
| Temperature na Operasyon | — | 0C to +95C (Tc) [DATA_NEEDED: exact range] |
| On-Die Termination | — | Yes (programmable) |
| Process Technology | — | 70nm |