IAUC100N04S6N028ATMA1 vs IAUCN04S7N019GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N04S6N028ATMA1 sa pamamagitan ng Infineon at IAUCN04S7N019GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC100N04S6N028ATMA1 IAUCN04S7N019GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 6 40V —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) at T_C=25°C 100 A —
Pulsed Drain Current (I_DM) 400 A —
R_DS(on) max @ V_GS=10V 2.8 mΩ (typical) —
Gate Threshold Voltage (V_GS(th)) 1.5 V to 2.5 V —
Total Gate Charge (Q_g) [DATA_NEEDED: Q_g in nC] —
Power Dissipation (P_D) at T_C=25°C 62 W —
Hanay ng Temperature na Operasyon -55 °C to +175 °C [DATA_NEEDED: junction temperature range from datasheet]
Packhaging PG-TDSON-8 (TDSON-8) PG-THSOG-4-1 (SSO4G 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Automotive Qualified Yes —
Tindminan RoHS Compliant Compliant
Product Family — OptiMOS 7
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tj) — 147 A
On-Resistance RDS(on) typical — 1.95 mOhm
Maximum Power Dissipation (Tc) — 81 W
Substrate Compatibility — IMS substrates and legacy PCB
Automotive Qualification — AEC-Q101 (per family datasheet)
Lead-Free — Yes
Tape and Reel Packaging — Yes (per ATMA1 suffix)

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