IAUC100N08S5N043ATMA1 vs IAUC100N04S6N015ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N08S5N043ATMA1 sa pamamagitan ng Infineon at IAUC100N04S6N015ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 ✓ NakahandaInfineon
IAUC100N04S6N015ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6N015ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC100N08S5N043ATMA1 | IAUC100N04S6N015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Series | IAUC / OptiMOS 5 | — |
| Uri ng Transistor | N-Channel MOSFET (Enhancement Mode) | — |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 100 A (package limited) | — |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W | — |
| Maximum R<sub>DS(on)</sub> | 4.3 mΩ | — |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C | -55 C to +175 C (junction, typical) |
| Packhaging | PG-TDSON-8-34 (SuperSO8) | PG-TDSON-8 (SSO8) 5x6 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pin | 8 | — |
| Level ng Sensitivity sa Asid ng Moisture (MSL) | MSL1 (up to 260°C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Technology | OptiMOS 5 (Trench) | N-Channel Trench MOSFET |
| Channel Mode | Enhancement | — |
| Product Family | — | OptiMOS-6 40V |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D @ T_C=25C) | — | 100 A |
| Power Dissipation (P_D @ T_C=25C) | — | 100 W |
| R_DS(on) max @ V_GS=10V | — | 1.5 mΩ (typical, per Infineon product page) |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Level ng MSL | — | 1 (unlimited floor life) |
| RoHS Compliance | — | Compliant |
| Lead-Free | — | Yes |