IAUC100N10S5N040ATMA1 vs IAUT300N08S5N012ATMA2 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC100N10S5N040ATMA1 sa pamamagitan ng Infineon at IAUT300N08S5N012ATMA2 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC100N10S5N040ATMA1 - 100V 4mΩ 100A OptiMOS-5 N-MOSFET | Infineon
IAUC100N10S5N040ATMA1 ✓ NakahandaInfineon
IAUT300N08S5N012ATMA2 - 80V 300A 1.2mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N012ATMA2 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC100N10S5N040ATMA1 | IAUT300N08S5N012ATMA2 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel, Enhancement Mode | — |
| Technology | OptiMOS-5 | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) @ TC=25C | 100 A (package-limited) | — |
| Pulsed Drain Current (IDM) | 400 A | 1200 A (per datasheet, typical) |
| RDS(on) max @ VGS=10V | 4 mΩ | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg value] | — |
| Maximum Power Dissipation (PD) | 167 W @ TC=25C | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 0.9 K/W | — |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | -55 °C to +175 °C (TJ) |
| Packhaging | PG-TDSON-8-34 (TDSON-8, 5x6 mm) Surface Mount | PG-HSOF-8-1 (8-pin HSOF with drain tab) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260C peak reflow) | [DATA_NEEDED: MSL level] |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche tested | — |
| AOI Compatibility | Feasible for Automatic Optical Inspection | — |
| Tindminan RoHS | Compliant | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS™-5 80 V |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 300 A |
| On-Resistance RDS(on) max @ VGS=10V | — | 1.2 mΩ |
| Maximum Power Dissipation (PD, Tc) | — | 375 W |
| Gate-to-Source Voltage (VGS) | — | ±20 V |
| RoHS Compliance | — | Compliant |