IAUC120N06S5L015ATMA1 vs IAUCN10S7L180ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC120N06S5L015ATMA1 sa pamamagitan ng Infineon at IAUCN10S7L180ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Nakahanda
Infineon
IAUCN10S7L180ATMA1 IAUCN10S7L180ATMA1 - 100V 39A 18mΩ Automotive MOSFET | Infineon

IAUCN10S7L180ATMA1 - 100V 39A 18mΩ Automotive MOSFET | Infineon

IAUCN10S7L180ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC120N06S5L015ATMA1 IAUCN10S7L180ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Technology N-Channel MOSFET (OptiMOS 5) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W —
Hanay ng Temperature na Operasyon -55C to +175C (Tj) —
Packhaging PG-TDSON-8-43 (Surface Mount) PG-TDSON-8-34 (Surface Mount)
Uri ng Pagpapasok Surface Mount (exposed pad) Surface Mount
Automotive Qualification AEC-Q101 qualified —
Gate-Source Voltage (VGS) max ±20 V —
Tindminan RoHS Compliant EU RoHS Compliant with Exemption
Level ng MSL [DATA_NEEDED: MSL level] —
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Manufacturer — Infineon Technologies
Series — OptiMOS™ 7
Uri ng Transistor — N-Channel MOSFET
Number of Channels — 1
Maximum Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID, Tj) — 39 A
Power Dissipation (PD, Tc=25°C) — 58 W
Drain-Source On-Resistance (RDS(on)) — 16.1 mΩ @ VGS=10 V
Typical RDS(on) — 18 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 1.6 V
Maximum Gate-Source Voltage (VGS) — ±20 V (±16 V per JLCPCB listing)
Total Gate Charge (Qg) — 11 nC
Input Capacitance (Ciss) — 272 pF
Output Capacitance (Coss) — 668 pF
Reverse Transfer Capacitance (Crss) — 7 pF
Temperature ng Junction na Operasyon — -55 °C to +175 °C
Automotive Qualified — Yes
Configuration — Single Quad Drain Triple Source
Channel Mode — Enhancement
Part Status — Active

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