IAUC120N06S5N032ATMA1 vs IAUC120N06S5L032ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUC120N06S5N032ATMA1 sa pamamagitan ng Infineon at IAUC120N06S5L032ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 ✓ Nakahanda
Infineon
IAUC120N06S5L032ATMA1 IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L032ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUC120N06S5N032ATMA1 IAUC120N06S5L032ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at TC=25C 120 A —
Power Dissipation (PD) at TC=25C 94 W —
On-Resistance RDS(on) max at VGS=10V 3.2 mOhm —
Gate Charge (Qg) typ 47 nC —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
Technology OptiMOS-5 N-Channel OptiMOS 5 Trench
Hanay ng Temperature na Operasyon -55C to +175C (Tj) -55 C to +175 C (T_j)
Packhaging PG-TDSON-8-34 (SSO8 5x6 mm) PG-TDSON-8-34 (5x6 mm)
Uri ng Pagpapasok Surface Mount (Tape and Reel) Surface Mount
Bilang ng Pin 8 —
Input Capacitance (Ciss) [DATA_NEEDED: Ciss] —
Output Capacitance (Coss) [DATA_NEEDED: Coss] —
Reverse Recovery Charge (Qrr) [DATA_NEEDED: Qrr] —
Gate Resistance (Rg) [DATA_NEEDED: Rg] —
Automotive Qualification AEC-Q101 qualified —
Tindminan RoHS Compliant Compliant
Level ng MSL MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5 (60 V)
Uri ng Transistor — N-Channel, Enhancement Mode
Drain-to-Source Voltage (V_DS) — 60 V
Continuous Drain Current (I_D, T_j) — 120 A
R_DS(on) Max (V_GS = 10 V) — 3.2 mOhm
Power Dissipation (P_D, T_C = 25 C) — 94 W
AEC-Q101 Qualified — Yes
Gate Threshold Voltage V_GS(th) — [DATA_NEEDED: V_GS(th) typical and min/max]
Total Gate Charge Q_G — [DATA_NEEDED: Q_G total at V_GS=10V]

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