IAUCN04S7L019ATMA1 vs IAUC60N04S6L039ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7L019ATMA1 sa pamamagitan ng Infineon at IAUC60N04S6L039ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L019ATMA1 ✓ NakahandaInfineon
IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon
IAUC60N04S6L039ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUCN04S7L019ATMA1 | IAUC60N04S6L039ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS™ 7 | — |
| FET Type | N-Channel | N-Channel |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | — |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | — |
| Packhaging | PG-TDSON-8-33 | PG-TDSON-8 (SSO8) 5x6 mm |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55°C to +175°C (junction) | — |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | — |
| Thermal Resistance, Junction-to-Ambient | [DATA_NEEDED: RthJA value] | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (13-inch reel) | — |
| Standard Pack Quantity | 5000 pieces | — |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | — |
| Technology | — | OptiMOS 6 (trench) |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25C) | — | 60 A |
| Pulsed Drain Current (I_DM) | — | 240 A |
| R_DS(on) max @ V_GS=10V | — | 3.9 milliohm |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (P_D) | — | 42 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| Avalanche Rated | — | Yes (100% avalanche tested) |