IAUCN04S7L019ATMA1 vs IAUC60N04S6L039ATMA1 比較

詳細並排比較 IAUCN04S7L019ATMA1 由 Infineon 與 IAUC60N04S6L039ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IAUCN04S7L019ATMA1 IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 - 40V 1.91mΩ OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L019ATMA1 ✓ 啟用中
Infineon
IAUC60N04S6L039ATMA1 IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 - 40V 60A OptiMOS 6 MOSFET | Infineon

IAUC60N04S6L039ATMA1 ✓ 啟用中

規格比較

參數 IAUCN04S7L019ATMA1 IAUC60N04S6L039ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
Manufacturer Infineon Technologies —
Series OptiMOS™ 7 —
FET Type N-Channel N-Channel
Drain-to-Source Voltage (V<sub>DS</sub>) 40 V —
Continuous Drain Current (I<sub>D</sub>) 120 A —
R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V 1.91 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: Vgs(th) typical/max value] —
Gate Charge (Q<sub>g</sub>) [DATA_NEEDED: Qg total/nominal value] —
封裝 PG-TDSON-8-33 PG-TDSON-8 (SSO8) 5x6 mm
安裝類型 Surface Mount Surface Mount
工作溫度 -55°C to +175°C (junction) —
Power Dissipation (P<sub>D</sub>) [DATA_NEEDED: Pd max at 25C] —
熱阻,接面至環境 [DATA_NEEDED: RthJA value] —
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
RoHS 狀態 Compliant Compliant
MSL 等級 1 1 (per JEDEC J-STD-020)
Packaging Tape & Reel (13-inch reel) —
Standard Pack Quantity 5000 pieces —
Ordering Code Suffix ATMA1 (Tape & Reel 13") —
Technology — OptiMOS 6 (trench)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D, T_C=25C) — 60 A
Pulsed Drain Current (I_DM) — 240 A
R_DS(on) max @ V_GS=10V — 3.9 milliohm
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: gate threshold voltage]
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]
Power Dissipation (P_D) — 42 W
工作接面溫度 — -55C to +175C
Avalanche Rated — Yes (100% avalanche tested)

資料表與資源

瀏覽所有產品 建立 BOM 索取報價