IAUCN04S7N019GATMA1 vs IAUC100N04S6N028ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N019GATMA1 sa pamamagitan ng Infineon at IAUC100N04S6N028ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUC100N04S6N028ATMA1 IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon

IAUC100N04S6N028ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN04S7N019GATMA1 IAUC100N04S6N028ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Uri ng Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tj) 147 A —
On-Resistance RDS(on) typical 1.95 mOhm —
Maximum Power Dissipation (Tc) 81 W —
Packhaging PG-THSOG-4-1 (SSO4G 5x6 mm) PG-TDSON-8 (TDSON-8)
Uri ng Pagpapasok Surface Mount Surface Mount
Substrate Compatibility IMS substrates and legacy PCB —
Automotive Qualification AEC-Q101 (per family datasheet) —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Tape and Reel Packaging Yes (per ATMA1 suffix) —
Hanay ng Temperature na Operasyon [DATA_NEEDED: junction temperature range from datasheet] -55 °C to +175 °C
Series — OptiMOS 6 40V
FET Type — N-Channel
Technology — MOSFET (Metal Oxide)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) at T_C=25°C — 100 A
Pulsed Drain Current (I_DM) — 400 A
R_DS(on) max @ V_GS=10V — 2.8 mΩ (typical)
Gate Threshold Voltage (V_GS(th)) — 1.5 V to 2.5 V
Total Gate Charge (Q_g) — [DATA_NEEDED: Q_g in nC]
Power Dissipation (P_D) at T_C=25°C — 62 W
Automotive Qualified — Yes

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