IAUCN04S7N027GATMA1 vs IAUCN04S7L028ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN04S7N027GATMA1 sa pamamagitan ng Infineon at IAUCN04S7L028ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN04S7N027GATMA1 IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6

IAUCN04S7N027GATMA1 ✓ Nakahanda
Infineon
IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN04S7N027GATMA1 IAUCN04S7L028ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 —
Channel Type N-Channel —
Drain-Source Voltage (Vds max) 40 V —
Continuous Drain Current (Id) 117 A —
On-Resistance (Rds(on) max) 2.67 mOhm —
Power Dissipation (Pd) 70 W (Tc) —
Packhaging / Kaso PG-THSOG-4-1 (SSO4G 5x6) —
Uri ng Pagpapasok Surface Mount Surface Mount
Qualification Automotive —
Hanay ng Temperature na Operasyon [DATA_NEEDED: operating temperature range] —
Gate Threshold Voltage (Vgs(th)) [DATA_NEEDED: Vgs(th)] —
Gate-Source Voltage Max (Vgs) [DATA_NEEDED: Vgs max] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg] —
Tindminan RoHS Compliant Compliant
Level ng MSL [DATA_NEEDED: MSL] —
Substrate Compatibility IMS substrates and legacy FR-4 —
Series — OptiMOS 7
Uri ng Transistor — N-Channel MOSFET
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) — 100 A
On-State Resistance (RDS(on)) max — 2.80 mOhm at VGS=10 V
On-State Resistance (RDS(on)) — 2.82 mOhm at VGS=10 V (JLCPCB reported)
Gate-Source Threshold (VGS(th)) — 1.8 V (typ)
Gate Charge (Qg) — 24 nC at VGS=10 V
Input Capacitance (Ciss) — 1.578 nF
Output Capacitance (Coss) — 788 pF
Reverse Transfer Capacitance (Crss) — 36 pF
Pwersang Pinahihigpit (Ptot) — 58 W
Temperature ng Junction na Operasyon — -55 C to +175 C
Packhaging — PG-TDSON-8-33 (TDSON-8 EP)
Automotive Qualification — AEC-Q101

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