IAUCN04S7N027GATMA1 vs IAUCN04S7L028ATMA1 比較
詳細並排比較 IAUCN04S7N027GATMA1 由 Infineon 與 IAUCN04S7L028ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IAUCN04S7N027GATMA1 | IAUCN04S7L028ATMA1 |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| 封裝 / 外殼 | PG-THSOG-4-1 (SSO4G 5x6) | — |
| 安裝類型 | Surface Mount | Surface Mount |
| Qualification | Automotive | — |
| 工作溫度範圍 | [DATA_NEEDED: operating temperature range] | — |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | — |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| RoHS 狀態 | Compliant | Compliant |
| MSL 等級 | [DATA_NEEDED: MSL] | — |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| Series | — | OptiMOS 7 |
| 電晶體類型 | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) | — | 100 A |
| On-State Resistance (RDS(on)) max | — | 2.80 mOhm at VGS=10 V |
| On-State Resistance (RDS(on)) | — | 2.82 mOhm at VGS=10 V (JLCPCB reported) |
| Gate-Source Threshold (VGS(th)) | — | 1.8 V (typ) |
| Gate Charge (Qg) | — | 24 nC at VGS=10 V |
| Input Capacitance (Ciss) | — | 1.578 nF |
| Output Capacitance (Coss) | — | 788 pF |
| Reverse Transfer Capacitance (Crss) | — | 36 pF |
| 功率耗散 (Ptot) | — | 58 W |
| 工作接面溫度 | — | -55 C to +175 C |
| 封裝 | — | PG-TDSON-8-33 (TDSON-8 EP) |
| Automotive Qualification | — | AEC-Q101 |