IAUCN08S7L110ATMA1 vs IAUCN04S7N037GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUCN08S7L110ATMA1 sa pamamagitan ng Infineon at IAUCN04S7N037GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 ✓ Nakahanda
Infineon
IAUCN04S7N037GATMA1 IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon

IAUCN04S7N037GATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUCN08S7L110ATMA1 IAUCN04S7N037GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) 50 A —
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) 58 W —
R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) 11 mΩ —
Gate-Source Voltage (V<sub>GS</sub>) max [DATA_NEEDED: V_GS_max] —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: V_GS_th] —
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Q_G_total] —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-TDSON-8-34 (TDSON-8) SSO4G 5x6 mm² (PG-THSOG-4-1)
Uri ng Pagpapasok Surface Mount Surface Mount (IMS substrate attach compatible)
Technology OptiMOS™ (Trench) Trench MOSFET, N-Channel
Level ng MSL [DATA_NEEDED: MSL level] [DATA_NEEDED: MSL level]
Tindminan RoHS Compliant Compliant
Automotive Qualified Yes (AEC-Q101 expected per family) —
Polarity Single N-Channel —
Configuration Single —
Manufacturer — Infineon Technologies
Series — OptiMOS 7
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at Tj — 91 A
On-State Resistance RDS(on) typical — 3.65 mΩ at VGS = 10 V
Power Dissipation (PD) at Tc — 57 W
Channel Type — N-Channel
Operating Mode — Enhancement
Automotive Qualification — AEC-Q101
Hanay ng Temperature na Operasyon — [DATA_NEEDED: junction/ambient temperature limits]
Gate Charge (Qg) typical — [DATA_NEEDED: total gate charge]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical/range]
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]

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