IAUZ30N06S5L140ATMA1 vs IPD031N06L3GATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUZ30N06S5L140ATMA1 sa pamamagitan ng Infineon at IPD031N06L3GATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 - 60V 30A OptiMOS 5 N-MOSFET | Infineon

IAUZ30N06S5L140ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUZ30N06S5L140ATMA1 IPD031N06L3GATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel N-Channel
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID, Tc) 30 A (Tj) —
Power Dissipation (PD, Tc) 33 W —
RDS(on) Max @ VGS=10 V 14 mΩ —
Gate Threshold Voltage (VGS(th)) 2.2 V (typ) 1.0 V to 2.2 V
Total Gate Charge (Qg) 12.2 nC @ VGS=10 V —
Output Capacitance (Coss) 888 pF @ VDS=30 V —
Packhaging PG-TSDSON-8-32 (S3O8, 3x3 mm) PG-TO252-3 (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Temperature ng Junction na Operasyon -55°C to +175°C —
Technology Family OptiMOS 5 —
Automotive Grade AEC-Q101 qualified —
Gate-Source Voltage Max ±20 V —
Lead-Free / RoHS Yes (RoHS compliant) —
Technology — MOSFET (Metal Oxide)
Drain-to-Source Voltage (VDS) — 60 V
Continuous Drain Current (ID) at TC=25°C — 100 A
Pulsed Drain Current (IDM) — 400 A
Maximum Power Dissipation (PD) at TC=25°C — 167 W
RDS(on) Max at VGS=10V — 3.1 mΩ
Gate Drive Voltage (Max RDS(on)) — 4.5 V, 10 V
Total Gate Charge (Qg) Typ — [DATA_NEEDED: Qg typical value]
Hanay ng Temperature na Operasyon — -55°C to +175°C
Series — OptiMOS 3
Level ng MSL — 1 (Unlimited)
Tindminan RoHS — Compliant

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