IAUZ40N06S5N050ATMA1 vs ISC011N06LM5ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUZ40N06S5N050ATMA1 sa pamamagitan ng Infineon at ISC011N06LM5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5N050ATMA1 ✓ NakahandaInfineon
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUZ40N06S5N050ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, TC) | 40 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-State Resistance (RDS(on), typ) | 5 mΩ at VGS=10 V | — |
| Maximum Power Dissipation (PD) | 71 W | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 |
| Channel Type | N-Channel Enhancement Mode | — |
| Packhaging | PG-TSDSON-8-33 (3.3 x 3.3 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Bilang ng Pin | 8 | 8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Thermal Resistance (RthJC, max) | [DATA_NEEDED: RthJC] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55C to +175C |
| Automotive Qualification | AEC-Q101 Qualified | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 | [DATA_NEEDED: MSL level] |
| Packaging | Tape & Reel | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta | — | 37 A |
| Continuous Drain Current (ID) at Tc | — | 288 A |
| Power Dissipation (PD) at Ta | — | 3 W |
| Power Dissipation (PD) at Tc | — | 188 W |
| RDS(on) max at VGS=10V | — | 1.15 mOhm |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg value] |