IAUZ40N06S5N050ATMA1 vs ISC011N06LM5ATMA1 Comparison

Detailed side-by-side comparison of IAUZ40N06S5N050ATMA1 by Infineon and ISC011N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUZ40N06S5N050ATMA1 IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 - 60V 5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUZ40N06S5N050ATMA1 ✓ Active

Specification Comparison

Parameter IAUZ40N06S5N050ATMA1 ISC011N06LM5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, TC) 40 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-State Resistance (RDS(on), typ) 5 mΩ at VGS=10 V —
Maximum Power Dissipation (PD) 71 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th), typ) 1.7 V —
Technology OptiMOS 5 (Trench) OptiMOS 5
Channel Type N-Channel Enhancement Mode —
Package PG-TSDSON-8-33 (3.3 x 3.3 mm) PG-TDSON-8-17 (SuperSO8 5x6 mm)
Pin Count 8 8
Mounting Type Surface Mount Surface Mount
Thermal Resistance (RthJC, max) [DATA_NEEDED: RthJC] —
Operating Temperature Range -55C to +175C -55C to +175C
Automotive Qualification AEC-Q101 Qualified —
RoHS Status Compliant Compliant
MSL Level 1 [DATA_NEEDED: MSL level]
Packaging Tape & Reel —
Manufacturer — Infineon Technologies
Part Number — ISC011N06LM5ATMA1
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta — 37 A
Continuous Drain Current (ID) at Tc — 288 A
Power Dissipation (PD) at Ta — 3 W
Power Dissipation (PD) at Tc — 188 W
RDS(on) max at VGS=10V — 1.15 mOhm
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) value]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg value]

Datasheets & Resources

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