IAUZ40N06S5N050ATMA1 vs ISC011N06LM5ATMA1 Comparison
Detailed side-by-side comparison of IAUZ40N06S5N050ATMA1 by Infineon and ISC011N06LM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUZ40N06S5N050ATMA1 - 60V 5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ40N06S5N050ATMA1 β ActiveInfineon
ISC011N06LM5ATMA1
ISC011N06LM5ATMA1 - 60V 1.1mOhm OptiMOS 5 N-MOSFET | Infineon
ISC011N06LM5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUZ40N06S5N050ATMA1 | ISC011N06LM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.78 | $0.74 |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, TC) | 40 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| On-State Resistance (RDS(on), typ) | 5 mΞ© at VGS=10 V | β |
| Maximum Power Dissipation (PD) | 71 W | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage (VGS(th), typ) | 1.7 V | β |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 |
| Channel Type | N-Channel Enhancement Mode | β |
| Package | PG-TSDSON-8-33 (3.3 x 3.3 mm) | PG-TDSON-8-17 (SuperSO8 5x6 mm) |
| Pin Count | 8 | 8 |
| Mounting Type | Surface Mount | Surface Mount |
| Thermal Resistance (RthJC, max) | [DATA_NEEDED: RthJC] | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C |
| Automotive Qualification | AEC-Q101 Qualified | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 | [DATA_NEEDED: MSL level] |
| Packaging | Tape & Reel | β |
| Manufacturer | β | Infineon Technologies |
| Part Number | β | ISC011N06LM5ATMA1 |
| Polarity / Channel Type | β | N-Channel |
| Continuous Drain Current (ID) at Ta | β | 37 A |
| Continuous Drain Current (ID) at Tc | β | 288 A |
| Power Dissipation (PD) at Ta | β | 3 W |
| Power Dissipation (PD) at Tc | β | 188 W |
| RDS(on) max at VGS=10V | β | 1.15 mOhm |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) value] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg value] |