IKD10N60RC2ATMA1 vs IGD06N60TATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IKD10N60RC2ATMA1 sa pamamagitan ng Infineon at IGD06N60TATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IKD10N60RC2ATMA1 | IGD06N60TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | IGBTs | Transistors |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Collector-Emitter Voltage (V_CE) | 600 V | — |
| Continuous Collector Current (I_C nom) | 10 A | — |
| Pulsed Collector Current (I_Cp) | 18.8 A | — |
| Maximum Power Dissipation (P_tot) | 79 W | — |
| Technology | TRENCHSTOP RC2 (Trench Field Stop IGBT with monolithically integrated diode) | — |
| Integrated Diode | Yes - reverse-conducting 2-diode co-packed | Yes, soft-recovery emitter-controlled diode |
| Packhaging | PG-TO252-3 (DPAK, surface mount) | PG-TO252-3-11 (DPAK / TO-252) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -40 C to +175 C (junction) | — |
| Gate-Emitter Voltage (V_GE) | [DATA_NEEDED: recommended V_GE value] | — |
| V_CE(sat) at I_C | [DATA_NEEDED: typical V_CE(sat)] | — |
| Switching Frequency (typical) | 10 - 30 kHz (hard-switching) | — |
| Short-Circuit Withstand Time | [DATA_NEEDED: t_sc rating] | — |
| Tindminan RoHS | Compliant | Compliant |
| Qualification | Industrial (qualified per Infineon product validation) | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | TRENCHSTOP IGBT3 |
| IGBT Type | — | Trench Field Stop |
| Collector-Emitter Voltage (VCE) | — | 600 V |
| Continuous Collector Current (IC) at TC=25°C | — | 12 A |
| Continuous Collector Current (IC) at TC=100°C | — | 6 A |
| Maximum Pulsed Collector Current (ICM) | — | 18 A (per datasheet) |
| Maximum Power Dissipation (Ptot) | — | 88 W |
| Gate-Emitter Voltage (VGE) | — | ±20 V |
| VCE(sat) at IC=6A, VGE=15V, Tj=25°C | — | 1.5 V (typical) |
| Gate Threshold Voltage (VGE(th)) | — | 3.0 V min / 5.0 V max (typical 4.0 V) |
| Turn-on Switching Energy (Eon) | — | [DATA_NEEDED: Eon] |
| Turn-off Switching Energy (Eoff) | — | [DATA_NEEDED: Eoff] |
| Temperature ng Junction na Operasyon | — | -40 °C to +175 °C |
| Storage Temperature | — | -55 °C to +150 °C |
| Lead-Free | — | Yes |