IPB021N10NM5LF2ATMA1 vs IPD50N04S408ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB021N10NM5LF2ATMA1 sa pamamagitan ng Infineon at IPD50N04S408ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPB021N10NM5LF2ATMA1 - 100V 2.1mΩ Linear FET MOSFET | Infineon
IPB021N10NM5LF2ATMA1 ✓ NakahandaInfineon
IPD50N04S408ATMA1 - 40V 50A N-Ch OptiMOS-T2 MOSFET | Infineon
IPD50N04S408ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB021N10NM5LF2ATMA1 | IPD50N04S408ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | OptiMOS 5 Linear FET 2 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 100 V | — |
| Continuous Drain Current (I_D) at T_C=25°C | 176 A | — |
| Continuous Drain Current (I_D) at T_A=25°C | 30 A | — |
| R_DS(on) Maximum | 2.1 mΩ | — |
| Gate-Source Voltage (V_GS) Maximum | ±20 V [DATA_NEEDED: absolute max rated V_GS] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min] | — |
| Power Dissipation (P_D) at T_C=25°C | 375 W | — |
| Power Dissipation (P_D) at T_A=25°C | 3.8 W | — |
| Hanay ng Temperature na Operasyon | -55°C to +175°C [DATA_NEEDED: confirm from datasheet operating junction range] | -55 °C to +175 °C |
| Packhaging | PG-TO263-3-2 (D2PAK, surface mount, 3 pins + tab) | PG-TO252-3-313 (DPAK) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Drive Voltage (Max R_DS(on), Min R_DS(on)) | 10 V, 15 V | — |
| Technology | OptiMOS 5 trench-gate MOSFET (Linear FET optimized) | — |
| Tindminan RoHS | Compliant | — |
| Level ng MSL | [DATA_NEEDED: confirm MSL rating from manufacturer datasheet] | MSL1 (260 °C peak reflow) |
| Product Family | — | OptiMOS-T2 |
| Polarity | — | N-Channel |
| Mode | — | Enhancement-mode |
| Drain-Source Voltage (V DS) | — | 40 V |
| Continuous Drain Current (I D, Tc) | — | 50 A |
| Power Dissipation (P D, Tc) | — | 46 W |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100 % Avalanche tested |
| Green Package (RoHS) | — | RoHS compliant |
| Gate Threshold Voltage (V GS(th)) | — | [DATA_NEEDED: V GS(th) typical] |
| On-State Resistance (R DS(on)) | — | [DATA_NEEDED: R DS(on) at V GS = 10 V] |
| Total Gate Charge (Q G) | — | [DATA_NEEDED: Q G typical] |