IPB17N25S3100ATMA1 vs IPG20N10S436AATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPB17N25S3100ATMA1 sa pamamagitan ng Infineon at IPG20N10S436AATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPG20N10S436AATMA1 - Dual N-CH 100V 20A MOSFET Array | Infineon
IPG20N10S436AATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPB17N25S3100ATMA1 | IPG20N10S436AATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB17N25S3100ATMA1 | — |
| Uri ng Transistor | N-Channel Enhancement Mode MOSFET | — |
| Drain-Source Voltage (VDS) | 250 V | 100 V |
| Continuous Drain Current (ID) at Tc | 17 A | — |
| Pulsed Drain Current (IDM) | 64 A | — |
| Drain-Source On-Resistance (RDS(on)) | 100 mOhm max @ VGS = 10 V | — |
| Typical RDS(on) | 19.3 mOhm (manufacturer trench-technology figure, per datasheet collateral) | — |
| Gate-Source Voltage (VGS) | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | 4 V | — |
| Total Gate Charge (Qg) | 19 nC @ VGS = 10 V | — |
| Input Capacitance (Ciss) | 1.5 nF | — |
| Output Capacitance (Coss) | 23 pF | — |
| Reverse Transfer Capacitance (Crss) | 625 pF | — |
| Power Dissipation (PD) | 107 W at Tc = 25 C | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | — |
| Packhaging | PG-TO263-3-2 (D2PAK-2) | PG-TDSON-8-10 (Wettable Flank) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| MSL (Moisture Sensitivity Level) | MSL1 (up to 260 C peak reflow) | — |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| Avalanche Rated | 100% avalanche tested | — |
| Tindminan RoHS | Compliant (Green Product) | Compliant (Green Product) |
| Configuration | — | Dual N-Channel (2 Elements with Built-in Diode) |
| Continuous Drain Current (ID) | — | 20 A (per channel) |
| Total Power Dissipation (PD) | — | 43 W |
| Operating Mode | — | Enhancement Mode |
| Operating Temperature (TJ max) | — | +175 C |
| JESD-609 Code | — | e3 |
| Level ng MSL | — | MSL1 (260 C peak reflow) |
| Automotive Qualification | — | AEC-Q101 |
| Avalanche Tested | — | 100% |
| AOI Compatible | — | Yes (Wettable Flank) |
| Channel Type | — | N-Channel Normal Level |