IPC100N04S5L1R5ATMA1 vs IAUA210N10S5N024AUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPC100N04S5L1R5ATMA1 sa pamamagitan ng Infineon at IAUA210N10S5N024AUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ NakahandaInfineon
IAUA210N10S5N024AUMA1 - 100V 2.4mΩ 210A OptiMOS 5 MOSFET | Infineon
IAUA210N10S5N024AUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPC100N04S5L1R5ATMA1 | IAUA210N10S5N024AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS-5 40 V | OptiMOS 5 |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Hanay ng Temperature na Operasyon | -55C to +175C | -55°C to +175°C (TJ) |
| Packhaging | PG-TDSON-8-34 (SS08 leadless) | PG-HSOF-5-4 (7×8 mm² sTOLL) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (260C peak reflow) | [DATA_NEEDED: MSL rating] |
| AEC-Q101 Qualified | Yes | — |
| Tindminan RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Technology | — | MOSFET (Metal Oxide), N-Channel |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID) @ Tj | — | 210 A |
| Continuous Drain Current (ID) @ TC=25°C | — | [DATA_NEEDED: ID at TC=25°C] |
| On-Resistance RDS(on) Max @ VGS=10V | — | 2.4 mΩ |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th) value] |
| Gate Charge Qg (typ) | — | [DATA_NEEDED: Qg typ @ VGS=10V] |
| Power Dissipation (PD) @ TC=25°C | — | 238 W |
| Automotive Qualification | — | AEC-Q101 |
| Lead-Free | — | Yes |
| Avalanche Energy Rated | — | Yes (per datasheet) |