IPC50N04S5L5R5ATMA1 vs BSC005N03LS5IATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPC50N04S5L5R5ATMA1 sa pamamagitan ng Infineon at BSC005N03LS5IATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon
IPC50N04S5L5R5ATMA1 ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IPC50N04S5L5R5ATMA1 | BSC005N03LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Transistor | N-Channel MOSFET | — |
| Mode | Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc) | 50 A | — |
| Maximum Drain Current (silicon-limited, 25 °C) | 60 A | — |
| On-Resistance RDS(on) max @ VGS=10 V | 5.5 mΩ | — |
| Gate Threshold VGS(th) | Logic Level (enhancement at ≤ 4.5 V VGS) | — |
| Power Dissipation (Tc) | 42 W | — |
| Thermal Resistance Junction-to-Case RthJC | 3.6 K/W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C | — |
| Packhaging | PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) | PG-TDSON-8 FL (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Qualified (automotive grade) | — |
| MSL (Moisture Sensitivity Level) | MSL1 | — |
| Peak Reflow Temperature | 260 °C | — |
| Avalanche Rating | 100 % Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSC005N03LS5IATMA1 |
| Technology | — | OptiMOS 5 (N-channel trench MOSFET) |
| Drain-Source Voltage (VDS) max | — | 30 V |
| Continuous Drain Current (ID) at Ta | — | 42 A |
| Continuous Drain Current (ID) at Tc | — | 433 A |
| Pulsed Drain Current (ID,pulse) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) max | — | 0.55 mΩ at VGS = 10 V, ID = 50 A |
| Gate-Source Threshold Voltage VGS(th) | — | 2 V (typ) at VGS = 10 mA |
| Power Dissipation at Ta | — | 3 W |
| Power Dissipation at Tc | — | 188 W |
| Temperature ng Junction na Operasyon | — | -55 °C to +175 °C |
| Polarity | — | N-Channel |
| Tindminan RoHS | — | Compliant (per LCSC listing) |
| Level ng MSL | — | [DATA_NEEDED: MSL rating] |