IPC50N04S5L5R5ATMA1 vs BSC005N03LS5IATMA1 比較

詳細並排比較 IPC50N04S5L5R5ATMA1 由 Infineon 與 BSC005N03LS5IATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
IPC50N04S5L5R5ATMA1 IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 ✓ 啟用中
Infineon
BSC005N03LS5IATMA1 BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 - 30V 433A OptiMOS 5 N-MOSFET | Infineon

BSC005N03LS5IATMA1 ✓ 啟用中

規格比較

參數 IPC50N04S5L5R5ATMA1 BSC005N03LS5IATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 啟用中
電晶體類型 N-Channel MOSFET —
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
工作溫度範圍 -55 °C to +175 °C —
封裝 PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) PG-TDSON-8 FL (SuperSO8 5x6)
安裝類型 Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Manufacturer — Infineon Technologies
Part Number — BSC005N03LS5IATMA1
Technology — OptiMOS 5 (N-channel trench MOSFET)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) at Ta — 42 A
Continuous Drain Current (ID) at Tc — 433 A
Pulsed Drain Current (ID,pulse) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) max — 0.55 mΩ at VGS = 10 V, ID = 50 A
Gate-Source Threshold Voltage VGS(th) — 2 V (typ) at VGS = 10 mA
Power Dissipation at Ta — 3 W
Power Dissipation at Tc — 188 W
工作接面溫度 — -55 °C to +175 °C
Polarity — N-Channel
RoHS 狀態 — Compliant (per LCSC listing)
MSL 等級 — [DATA_NEEDED: MSL rating]

資料表與資源

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