IPC50N04S5L5R5ATMA1 vs IAUC60N10S5L110ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPC50N04S5L5R5ATMA1 sa pamamagitan ng Infineon at IAUC60N10S5L110ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPC50N04S5L5R5ATMA1 IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 - 40V 50A 5.5mΩ OptiMOS Auto MOSFET | Infineon

IPC50N04S5L5R5ATMA1 ✓ Nakahanda
Infineon
IAUC60N10S5L110ATMA1 IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon

IAUC60N10S5L110ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPC50N04S5L5R5ATMA1 IAUC60N10S5L110ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Uri ng Transistor N-Channel MOSFET N-Channel MOSFET
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
Hanay ng Temperature na Operasyon -55 °C to +175 °C [DATA_NEEDED: min/max operating temperature]
Packhaging PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) PG-TDSON-8-33 (TDSON-8 Single)
Uri ng Pagpapasok Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Manufacturer — Infineon Technologies
Series — OptiMOS™-5
Drain-Source Voltage (V<sub>DS</sub>) — 100 V
Continuous Drain Current (I<sub>D</sub>, Tc) — 60 A
Power Dissipation (P<sub>D</sub>, Tc) — 88 W
R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V — 11 mΩ
Gate Threshold Voltage (V<sub>GS(th)</sub>) — 1.2 V
Gate-Source Voltage (V<sub>GS</sub>) Max — [DATA_NEEDED: VGS max rating]
Total Gate Charge (Q<sub>G</sub>) — [DATA_NEEDED: Qg at specified Vgs]
Avalanche Energy (E<sub>AS</sub>) — [DATA_NEEDED: single-pulse avalanche energy]
Lead-Free / RoHS — Yes (RoHS compliant per LCSC listing)
Packing Code — ATMA1 (Tape & Reel)
Level ng MSL — 1 (per LCSC datasheet snippet)
Wala sa Halogen — Yes (per Infineon product classification)
Customer Info / FGR — J52 (per Infineon product data)

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