IPC70N04S5L4R2ATMA1 vs IPC100N04S52R8ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPC70N04S5L4R2ATMA1 sa pamamagitan ng Infineon at IPC100N04S52R8ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 ✓ NakahandaInfineon
IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon
IPC100N04S52R8ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPC70N04S5L4R2ATMA1 | IPC100N04S52R8ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| FET Type | N-Channel | — |
| Technology | MOSFET (Metal Oxide) | — |
| Drain to Source Voltage (Vdss) | 40 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 70 A | — |
| Power Dissipation (Pd) @ Tc=25°C | 50 W | — |
| R_DS(on) Max @ Vgs=10V | 4.2 mΩ (typ) | — |
| Gate Threshold (Vgs(th)) | Logic Level (4.5 V max Rds On, Min Rds On) | — |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V | — |
| Packhaging | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-34 (TDSON-8 EP) |
| Operating Temperature (Tj) | -55°C to +175°C | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | MSL1 (up to 260°C peak reflow) | 1 (260C peak reflow) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100% (60 A production test) | 100% (per Infineon standard) |
| Tindminan RoHS | Compliant (Green Product) | — |
| Configuration | Single with Built-in Diode | — |
| Case Connection | DRAIN | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25C) | — | 100 A |
| Continuous Drain Current (ID, Tc=100C) | — | [DATA_NEEDED: ID at Tc=100C] |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | — | [DATA_NEEDED: VGS max] |
| Gate Threshold Voltage (VGS(th), typ) | — | [DATA_NEEDED: VGS(th) typical] |
| On-State Resistance RDS(on) typ @ VGS=10V | — | 2.8 mOhm |
| On-State Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max] |
| Power Dissipation (PD, Tc=25C) | — | 75 W |
| Temperature ng Junction na Operasyon | — | -55C to +175C |
| RoHS / Green Product | — | Yes (RoHS compliant) |